|
MOSFET CJ2324-G (N-Channel MOSFET ) RoHS Device Comchip SMD Diode Specialist V(BR)DSS 100V RDS(on)MAX 234mΩ @ 10V 267mΩ @ 6V 278mΩ @ 4.5V Features - TrenchFET Power MOSFET - Low RDS(ON). - Surface mount package. Mechanical data - Case: SOT-23, molded plastic. Circuit diagram ID 2A SOT-23
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V(D-S) MOSFET APPLICATIONS z PA Switch z Load Switch SOT-23 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Sou
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S4 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless o
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS -20 V RDS(on)MAX 120mΩ@-4.5V 160mΩ@-2.5V ID -2.3A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE z TrenchFET Power MOSFET APPLICATION z Load Switch for Port
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S6 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (at TA=25℃ unles
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S3 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless o
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |