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Datasheet CJ2101 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | CJ2101 | P-Channel MOSFET CJ2101
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE 2. SOURCE 3. DRAIN
APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Cell Phones, Digital C |
 ZPSEMI |
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| 2 | CJ2101 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2101 P-Channel 8-V(D-S) MOSFET
FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life
SOT-323
1. GATE 2. SOURCE 1 3. DRAIN
2
APPLICATIONS z High Side Load Switch z Charging Circuit z Single |
 JCST |
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| 1 | CJ2101-G | MOSFET ( Transistor ) MOSFET
CJ2101-G
RoHS Device
V(BR)DSS -20V
RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V
ID -1.4A
Features
- P-Channel MOSFET - Leading trench technology for low RDS(on)
extending battery life
Mechanical data
- Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750,
meth |
 Comchip |
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