CGHV96050F1
CREE
Input/Output Matched GaN HEMTCGHV96050F1
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT
Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power add