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Datasheet CGH55030F1 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CGH55030F1   GaN HEMT

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal f
Cree
Cree
datasheet CGH55030F1 pdf

CGH5503 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CGH55030P1

GaN HEMT

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F
Cree
Cree
datasheet pdf - Cree
CGH55030F1

GaN HEMT

CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F
Cree
Cree
datasheet pdf - Cree


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Número de pieza Descripción Fabricantes PDF
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