Datasheet CGH40120F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CGH40120F	RF Power GaN HEMT CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effici	CREE

CGH401 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CGH40120F	RF Power GaN HEMT CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEM	CREE
CGH40180PP	RF Power GaN HEMT CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN	Cree

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Número de pieza	Descripción	Fabricantes	PDF
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