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Datasheet CGH31240F Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CGH31240F   GaN HEMT

CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal
Cree
Cree
datasheet CGH31240F pdf

CGH312 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CGH31240F

GaN HEMT

CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes
Cree
Cree
datasheet pdf - Cree


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Número de pieza Descripción Fabricantes PDF
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