CFH120-08
Infineon Technologies AG
Preliminary DatasheetGaAs HEMT Preliminary Datasheet
Features • • • • • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz
1 = source 2 = drain
CFH120-06
Preliminary DatasheetGaAs HEMT Preliminary Datasheet
Features • • • • • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz
1 = source 2 = drain 3 = source 4 = gate
CFH120
___________
Infineon Technologies AG
PDF
CFH120-10
Preliminary DatasheetGaAs HEMT Preliminary Datasheet
Features • • • • • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz
1 = source 2 = drain 3 = source 4 = gate
CFH120
___________
Infineon Technologies AG
PDF