Datasheet CFG40006S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CFG40006S	RF Power GaN HEMT CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high	Cree

CFG400 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CFG40006S	RF Power GaN HEMT CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.	Cree

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Número de pieza	Descripción	Fabricantes	PDF
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