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CED6060R/CEU6060R Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 60V , 30A , RDS(ON)=25m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D G S G D S D G CEU SERIES TO-2
CED6031L/CEU6031L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package
CED6030L/CEU6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A, RDS(ON) = 15.5mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 packa
CED6056/CEU6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES T
CED6042/CEU6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 90A , RDS(ON) = 5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S
CED6060N/CEU6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252
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