CEU3100
CET
N-Channel Enhancement Mode Field Effect TransistorCED3100/CEU3100
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
CEU3120
N-Channel Enhancement Mode Field Effect TransistorCED3120/CEU3120
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 36A , RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CET
PDF
CEU3172
N-Channel Enhancement Mode Field Effect TransistorCED3172/CEU3172
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CET
PDF