CEU16N10
CET
N-Channel Enhancement Mode Field Effect TransistorCED16N10/CEU16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 &
CEU16N10L
Chino-Excel Technology
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired