파트넘버.co.kr CEU02N9 데이터시트 검색

CEU02N9 전자부품 데이터시트



CEU02N9 전자부품 회로 및
기능 검색 결과



CEU02N9  

CET
CET

CEU02N9

N-Channel Enhancement Mode Field Effect Transistor

CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A, RDS(ON) = 6.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.




관련 부품 CEU02 상세설명

CEU02N7G-1  

  
N-Channel Enhancement Mode Field Effect Transistor

CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D



CET
CET

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CEU02N7G  

  
N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED02N7G/CEU02N7G D D G S CEU SERIES TO-



Chino-Excel Technology
Chino-Excel Technology

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CEU02N7  

  
N-Channel Enhancement Mode Field Effect Transistor

CED02N7/CEU02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D



CET
CET

PDF



CEU02N6G  

  
N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED02N6G/CEU02N6G D D G S CEU SERIES TO-252(D



Chino-Excel Technology
Chino-Excel Technology

PDF



CEU02N6A  

  
N-Channel Enhancement Mode Field Effect Transistor

CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(



CET
CET

PDF



CEU02N65A  

  
N-Channel Enhancement Mode Field Effect Transistor

CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G



CET
CET

PDF




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