CEU02N6
CET
N-Channel Logic Level Enhancement Mode Field Effect TransistorCED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package
CEU02N65A
CET
N-Channel Enhancement Mode Field Effect TransistorCED02N65A/CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acq
CEU02N6A
CET
N-Channel Enhancement Mode Field Effect TransistorCED02N6A/CEU02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-
CEU02N6G
Chino-Excel Technology
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED02N6