CEU01N65A
Chino-Excel Technology
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED0
CEU01N6G
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N6G/CEU01N6G
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE M
Chino-Excel Technology
PDF
CEU01N65
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED01N65/CEU01N65
PRELIMINARY
D
D G S CE
Chino-Excel Technology
PDF
CEU01N6
N-Channel Enhancement Mode Field Effect TransistorCED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D
CET
PDF