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Datasheet CET9435A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CET9435A | P-Channel Enhancement Mode MOSFET |  Chino-Excel Technology | mosfet |
CET Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CET0215 | N-Channel Enhancement Mode Field Effect Transistor CET0215
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package.
D
DS D
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SOT-223
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ABSOLUTE MAX  CET transistor | | |
| 2 | CET04N10 | N-Channel Enhancement Mode Field Effect Transistor CET04N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D
D G SOT-223 D
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G
S
ABSOLUTE MAXIMUM Chino-Excel Technology transistor | | |
| 3 | CET3055 | N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology transistor | | |
| 4 | CET3055L | N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology transistor | | |
| 5 | CET3252 | N-Channel Enhancement Mode Field Effect Transistor CET3252
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 8A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D PRELIMINARY
D G SOT-223 D
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G
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ABSOLU Chino-Excel Technology transistor | | |
| 6 | CET4301 | P-Channel Enhancement Mode Field Effect Transistor CET4301
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D
D D G SOT-223
G
S
S
ABSOLUTE MAXI Chino-Excel Technology transistor | | |
| 7 | CET4401B | P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES
-40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D
CET4401B
D G SOT-223 D
S
G
S
ABSOLUTE M Chino-Excel Technology transistor | |
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