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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. CES2336 PRELIMINARY D G D G SOT-23 S S ABSOLU
P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G S G SOT-23 CE
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.2A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. CES2324 D D G SOT-23 G S S ABSOLUTE MAXIMUM R
CES2321A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G
CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMU
CES2320 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.2A, RDS(ON) = 29mΩ (typ) @VGS = 10V. RDS(ON) = 45mΩ (typ) @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. D DS G SOT-23 G S ABSOLUTE
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