CEP13N10
CET
N-Channel Enhancement Mode Field Effect TransistorCEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 &
CEP13N10L
CET
N-Channel Enhancement Mode Field Effect TransistorCEP13N10L/CEB13N10L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead fr