Datasheet CEP12P10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEP12P10	P-Channel Enhancement Mode Field Effect Transistor CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-	CET

CEP12 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEP12N6	N-Channel Enhancement Mode Field Effect Transistor CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N6 CEB12N6 CEF12N6 VDSS 600V 600V 600V RDS(ON) 0.65Ω 0.65Ω 0.65Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). Hig	CET
CEP125NP-0R3NC-U	Power Inductors SMD Power Inductor CEP125 Description • Ferrite core construction. • Magnetically shielded. • L W H: 12.9 12.9 5.6 mm Max. • Product weight: 2.7g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS × × × × Dimension - [mm] 12.5±0.4 MAX.5.6 4.0±0.2	Sumida
CEP12N5	N-Channel Enhancement Mode Field Effect Transistor CEP12N5/CEB12N5 CEF12N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N5 CEB12N5 CEF12N5 VDSS 500V 500V 500V RDS(ON) 0.54Ω 0.54Ω 0.54Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). Hig	CET

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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