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CEP1186/CEB1186 CEF1186 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1186 CEB1186 CEF1186 VDSS 800V RDS(ON) 2.3Ω ID 6A @VGS 10V 800V 2.3Ω 6A 10V 800V 2.3Ω 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability
N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9Ω 0.9Ω 0.9Ω ID 10A 10A 10A e @VGS 10V 10V 10V CEP1165/CEB1165 CEF1165 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lea
CEP1112 ◆ Outline Pulse transformer for Industry. ◆ Application Battery management system of Industry ◆ Features SMD Type and 11mm square. High withstand Voltage : 4,000Vrms Operating temperature : - 40deg. ~ +125deg. ◆ Specifications Item Inductance (1-4) Stray
Transformers for LT8301 ◆Outline ・RoHS compliance ・MSL level1 ・Operating temperature range : -40℃~+125℃ (Including coil’s self temperature rise) ・Packing : Tape & Reel, 200pcs par reel. ◆Applications ・Transformer for LT8301 reference. Isolated Power Supplies for Telecom, Indus
CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS comp
CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1195 CEB1195 CEF1195 VDSS 900V RDS(ON) 2.75Ω ID 5A @VGS 10V 900V 2.75Ω 5A 10V 900V 2.75Ω 5A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capabi
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