파트넘버.co.kr CEP1175 데이터시트 검색

CEP1175 전자부품 데이터시트



CEP1175 전자부품 회로 및
기능 검색 결과



CEP1175  

CET
CET

CEP1175

N-Channel Enhancement Mode Field Effect Transistor

CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1175 CEB1175 CEF1175 VDSS 650V 650V 650V RDS(ON) 1Ω 1Ω 1Ω ID 10A 10A 10A e @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power




관련 부품 CEP11 상세설명

CEP1186  

  
N-Channel Enhancement Mode Field Effect Transistor

CEP1186/CEB1186 CEF1186 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1186 CEB1186 CEF1186 VDSS 800V RDS(ON) 2.3Ω ID 6A @VGS 10V 800V 2.3Ω 6A 10V 800V 2.3Ω 6A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability



CET
CET

PDF



CEP1165  

  
N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9Ω 0.9Ω 0.9Ω ID 10A 10A 10A e @VGS 10V 10V 10V CEP1165/CEB1165 CEF1165 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lea



CET
CET

PDF



CEP1112  

  
Pulse transformer

CEP1112 ◆ Outline  Pulse transformer for Industry. ◆ Application  Battery management system of Industry ◆ Features  SMD Type and 11mm square.  High withstand Voltage : 4,000Vrms  Operating temperature : - 40deg. ~ +125deg. ◆ Specifications Item Inductance (1-4) Stray



Sumida
Sumida

PDF



CEP1110  

  
Pulse transformer

Transformers for LT8301 ◆Outline ・RoHS compliance ・MSL level1 ・Operating temperature range : -40℃~+125℃ (Including coil’s self temperature rise) ・Packing : Tape & Reel, 200pcs par reel. ◆Applications ・Transformer for LT8301 reference. Isolated Power Supplies for Telecom, Indus



Sumida
Sumida

PDF



CEP110P03  

  
P-Channel Enhancement Mode Field Effect Transistor

CEP110P03/CEB110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS comp



CET
CET

PDF



CEP1195  

  
N-Channel Enhancement Mode Field Effect Transistor

CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1195 CEB1195 CEF1195 VDSS 900V RDS(ON) 2.75Ω ID 5A @VGS 10V 900V 2.75Ω 5A 10V 900V 2.75Ω 5A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capabi



CET
CET

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처