CEP06N7
CET
N-Channel Enhancement Mode Field Effect TransistorCEP06N7/CEB06N7
CEF06N7
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP06N7 CEB06N7 CEF06N7
VDSS 700V 700V
700V
RDS(ON) 2Ω 2Ω
2Ω
ID @VGS 6A 10V 6A 10V 6A d 10V
Super high dense cell design for extremely low RDS(O
CEP06N5
N-Channel Logic Level Enhancement Mode Field Effect TransistorCEP06N5/CEB06N5
Oct. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
4 4
D
G
D G
G D S
S
CEB SERIES TO-
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