CEM6867
CET
Dual P-Channel Enhancement Mode Field Effect TransistorCEM6867
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free p
CEM6861
P-Channel Enhancement Mode Field Effect TransistorCEM6861
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -3.5A, RDS(ON) = 125mΩ @VGS = -10V. RDS(ON) = 169mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8
CET
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