|
CEM6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 12A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Pac
CEM6086 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 12A, RDS(ON) = 11.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1
CEM6088L Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Su
CEM6088 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 D1 D2 D2
CEM6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |