CEM4531
Chino-Excel Technology
P-Channel Enhancement Mode Field Effect TransistorCEM4531
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -6.5A, RDS(ON) = 35mΩ @VGS = -10V. RDS(ON) = 55mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product i
CEM4559
Dual Enhancement Mode Field Effect TransistorCEM4559
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 4.5A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -60V, -3.5A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).
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Chino-Excel Technology
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CEM4532
Dual Enhancement Mode Field Effect TransistorCEM4532
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 4.7A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. -30V, -4.5A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 135mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and cu
Chino-Excel Technology
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