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CEM4201 전자부품 데이터시트



CEM4201 전자부품 회로 및
기능 검색 결과



CEM4201  

CET
CET

CEM4201

P-Channel Enhancement Mode Field Effect Transistor

CEM4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -7.5A, RDS(ON) = 28mΩ @VGS = -10V. RDS(ON) = 38mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product




관련 부품 CEM42 상세설명

CEM4282  

  
N-Channel Enhancement Mode Field Effect Transistor

CEM4282 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 6.6A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 48mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acquired. Surface mount



CET
CET

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CEM4279  

  
Dual Enhancement Mode Field Effect Transistor

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM4279 5 FEATURES 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and



CET
CET

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CEM4269  

  
Dual Enhancement Mode Field Effect Transistor

CEM4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V, -5.2A, RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and curre



CET
CET

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CEM4228  

  
Dual N-Channel Enhancement Mode Field Effect Transistor

CEM4228 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 6.3A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8



CET
CET

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CEM4207  

  
P-Channel Enhancement Mode Field Effect Transistor

CEM4207 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -7A, RDS(ON) = 30mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mo



CET
CET

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CEM4204  

  
N-Channel Enhancement Mode Field Effect Transistor

CEM4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D



Chino-Excel Technology
Chino-Excel Technology

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