CEM3307
P-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8
CEM3307
CET
PDF
CEM3301
P-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8
CEM3301
CET
PDF
CEM3317
P-Channel Enhancement Mode Field Effect TransistorCEM3317
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V.
-30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power a
CET
PDF