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Datasheet CEM3252 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CEM3252 | N-Channel Enhancement Mode Field Effect Transistor CEM3252
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
D D 7 D 6 D 5
5
Lead free product is acquired. Surface mount |
 CET |
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| 1 | CEM3252L | N-Channel Enhancement Mode Field Effect Transistor CEM3252L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Su |
 Chino-Excel Technology |
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