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CEM3172 전자부품 데이터시트



CEM3172 전자부품 회로 및
기능 검색 결과



CEM3172  

CET
CET

CEM3172

N-Channel Enhancement Mode Field Effect Transistor

CEM3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is ac




관련 부품 CEM31 상세설명

CEM3109  

  
Dual Enhancement Mode Field Effect Transistor

CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High pow



CET
CET

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CEM3138  

  
Dual N-Channel Enhancement Mode Field Effect Transistor

Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capabili



CET
CET

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CEM3128  

  
Dual N-Channel Enhancement Mode Field Effect Transistor

CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 16mΩ @VGS = 10V. RDS(ON) = 23mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D



CET
CET

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CEM3120  

  
N-Channel Enhancement Mode Field Effect Transistor

CEM3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acquired. Surface mount P



CET
CET

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CEM3178  

  
Dual N-Channel Enhancement Mode Field Effect Transistor

CEM3178 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8



CET
CET

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