|
CEM2182 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 9.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mou
CEM2133 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface
www.partnumber.co.kr P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -7.6A, RDS(ON) = 22mΩ @VGS = -4.5V. RDS(ON) = 32mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount
CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |