CEK01N6G
CET
N-Channel Enhancement Mode Field Effect Transistorwww.DataSheet.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package
CEK01N65
N-Channel Enhancement Mode Field Effect Transistorwww.partnumber.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N65
PRELIMINARY
D
G
G D G
CET
PDF
CEK01N7
N-Channel Enhancement Mode Field Effect TransistorCEK01N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 0.3A, RDS(ON) = 18 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
CET
PDF
CEK01N65A
N-Channel Enhancement Mode Field Effect Transistorwww.partnumber.co.kr
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
CEK01N65A
D
G
G D
S
G
D
TO-92(
CET
PDF