CEF09N6
CET
N-Channel Enhancement Mode Field Effect TransistorCEP09N6/CEB09N6 CEI09N6/CEF09N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D
Super high dense cell design
CEF09N6
Chino-Excel Technology
N-Channel Logic Level Enhancement Mode Field Effect TransistorCEF09N6
Jul. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 6A ,RDS(ON)= 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through ho