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Datasheet CED6601 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CED6601 | P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -16A, RDS(ON) = 86mΩ RDS(ON) = 125mΩ @VGS = -10V. @VGS = -4.5V.
CED6601/CEU6601
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 pa |
CET |
CED6 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CED61A3 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CED603AL | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CED6861 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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