파트넘버.co.kr CED655 데이터시트 검색

CED655 전자부품 데이터시트



CED655 전자부품 회로 및
기능 검색 결과



CED655  

CET
CET

CED655

N-Channel Enhancement Mode Field Effect Transistor

CED655/CEU655 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 6.4A, RDS(ON) = 0.45Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-2




관련 부품 CED6 상세설명

CED6426  

  
N-Channel Enhancement Mode Field Effect Transistor

CED6426/CEU6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A , RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package



CET
CET

PDF



CED63A3  

  
N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED63A3/CEU63A3



CET
CET

PDF



CED6336  

  
N-Channel Enhancement Mode Field Effect Transistor

CED6336/CEU6336 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 25A , RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 &



CET
CET

PDF



CED630N  

  
N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED630N/CEU630N D D G S CEU SERIES TO-25



Chino-Excel Technology
Chino-Excel Technology

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CED62A2  

  
N-Channel Enhancement Mode Field Effect Transistor

CED62A2/CEU62A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 48A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 17mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.



CET
CET

PDF



CED61A2  

  
N-Channel Enhancement Mode Field Effect Transistor

CED61A2/CEU61A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 45A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.



CET
CET

PDF




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