CED4311
CET
P-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquire
CED4301
P-Channel Enhancement Mode Field Effect TransistorCED4301/CEU4301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 pack
CET
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