CED3070
CET
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired
CED30N08
N-Channel Enhancement Mode Field Effect TransistorCED30N08/CEU30N08
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
80V, 30A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO
CET
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CED3060
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED3060/CEU3
Chino-Excel Technology
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CED30P10
P-Channel Enhancement Mode Field Effect TransistorCED30P10/CEU30P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 p
CET
PDF