Datasheet CEB93A3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEB93A3	N-Channel Enhancement Mode Field Effect Transistor CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 150A, RDS(ON) = 3.0 mΩ @VGS = 10V. RDS(ON) = 6.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 pa	CET

CEB9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEB95P04	P-Channel Enhancement Mode Field Effect Transistor CEP95P04/CEB95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -93A, RDS(ON) =8.4mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free produ	CET
CEB9060N	N-Channel Enhancement Mode Field Effect Transistor CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060N CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 90A 90A 90A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power a	CET
CEB9N25	N-Channel Enhancement Mode Field Effect Transistor	Chino-Excel Technology

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Número de pieza	Descripción	Fabricantes	PDF
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