CEB75A3
CET
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO
CEB75N10
N-Channel Enhancement Mode Field Effect TransistorCEP75N10/CEB75N10
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 72A, RDS(ON) = 15mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CEB75N06G
N-Channel Enhancement Mode Field Effect TransistorCEP75N06G/CEB75N06G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
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CEB SERIES
CET
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CEB75N06
N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP75N06/CEB75N06
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CET
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