CEB65A3
CET
N-Channel Enhancement Mode Field Effect TransistorCEP65A3/CEB65A3
N-Channel Enhancement Mode Field Effect Transistor FEATURES
25V, 45A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product
CEB658N
N-Channel Enhancement Mode Field Effect TransistorCEP658N/CEB658N CEF658N
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP658N CEB658N CEF685N VDSS 180V 180V 180V RDS(ON) 0.22Ω 0.22Ω 0.22Ω ID 16A 16A 16A
d
PRELIMINARY
@VGS 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handi
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CEB655N
N-Channel Enhancement Mode Field Effect TransistorCEP655N/CEB655N CEI655N/CEF655N
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP655N CEB655N CEI655N CEF655N VDSS 150V 150V 150V 150V RDS(ON) 0.153Ω 0.153Ω 0.153Ω 0.153Ω ID 15A 15A 15A 15A
d
PRELIMINARY
@VGS 10V 10V 10V 10V D
Super high dense cell design for extremely
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