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Datasheet CEB6106 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEB6106 | N-Channel Enhancement Mode Field Effect Transistor CEP6106/CEB6106
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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CEB SERIES TO-263(D |
CET |
CEB6 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEB603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEB65A3 | N-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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