CEB6086
CET
N-Channel Enhancement Mode Field Effect TransistorCEP6086/CEB6086
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 70A, RDS(ON) = 9.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-2
CEB6086L
CET
N-Channel Enhancement Mode Field Effect TransistorCEP6086L/CEB6086L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capabili