파트넘버.co.kr CEB35P10 데이터시트 검색

CEB35P10 전자부품 데이터시트



CEB35P10 전자부품 회로 및
기능 검색 결과



CEB35P10  

CET
CET

CEB35P10

P-Channel Enhancement Mode Field Effect Transistor

CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.




관련 부품 CEB35P 상세설명

CEB35P03  

  
P-Channel Enhancement Mode Field Effect Transistor

CEP35P03/CEB35P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package



CET
CET

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처