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Datasheet CEB35P03 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEB35P03 | P-Channel Enhancement Mode Field Effect Transistor CEP35P03/CEB35P03
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package |
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CEB35 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEB35P10 | P-Channel Enhancement Mode Field Effect Transistor |
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CEB35P03 | P-Channel Enhancement Mode Field Effect Transistor |
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Número de pieza | Descripción | Fabricantes | |
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