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Datasheet CEB16N10 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | CEB16N10 | N-Channel Enhancement Mode Field Effect Transistor CEP16N10/CEB16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
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1 | CEB16N10L | N-Channel Enhancement Mode Field Effect Transistor CEP16N10L/CEB16N10L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO- |
CET |
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Número de pieza | Descripción | Fabricantes | |
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