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CEP13N5A/CEB13N5A CEF13N5A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5A CEB13N5A CEF13N5A VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing c
CEP13N5/CEB13N5 CEF13N5 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP13N5 CEB13N5 CEF13N5 VDSS 500V 500V 500V RDS(ON) 0.48Ω 0.48Ω 0.48Ω ID 13A 13A 13A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capabil
CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263
CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-
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