파트넘버.co.kr C5966 데이터시트 검색

C5966 전자부품 데이터시트



C5966 전자부품 회로 및
기능 검색 결과



C5966  

Sanyo Semicon Device
Sanyo Semicon Device

C5966

NPN Transistor - 2SC5966

Ordering number : ENN7653 2SC5966 NPN Triple Diffused Planar Silicon Transistor 2SC5966 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5966] 16.0




관련 부품 C59 상세설명

C5991  

  
NPN Transistor - 2SC5991

Ordering number : ENN8071 2SC5991 2SC5991 Applications • NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET, MBIT process. High current capacitance.



Sanyo Semicon Device
Sanyo Semicon Device

PDF



C5964  

  
NMOS multichannel detector head



Hamamatsu
Hamamatsu

PDF



C5949  

  
Position Sensor System

DATA SHEET Position Sensor System C5949 v Shown with optional lens. The C5949 is a compact, high-resolution, light-spot position measurement system using a non-discrete position sensitive detector (PSD) and infrared LED. The system allows you to track the movement of up to seven LEDs (LED target:



Hamamatsu
Hamamatsu

PDF



C5988  

  
Silicon NPN transistor epitaxial type

C5988 Silicon NPN transistor epitaxial type C5988 [ Applications ] High current amplifier [ Feature ] Collector current IC= 6A Very low collector saturation voltage VCE(sat)= 550mV (Max.) at IC= 6A, IB= 300mA Exellent gain characteristics specified up to 10 ampers PNP complementary pair with A598



PHENITEC SEMICONDUCTOR
PHENITEC SEMICONDUCTOR

PDF



C5906  

  
Silicon NPN transistor

Silicon NPN transistor epitaxial type C5906 C5906 [ Applications ] High voltage, High current [ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed [ Absolute maximum ratings (Ta=



PHENITEC SEMICONDUCTOR
PHENITEC SEMICONDUCTOR

PDF



C5906  

  
Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed swi



Toshiba
Toshiba

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처