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C5801 전자부품 데이터시트



C5801 전자부품 회로 및
기능 검색 결과



C5801  

NEC
NEC

C5801

NPN Transistor - 2SC5801

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less mini




관련 부품 C58 상세설명

C5812  

  
NPN Transistor - 2SC5812

2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK Note: Marking is “WG–“. 3 1 2 1. Emitter



Hitachi Semiconductor
Hitachi Semiconductor

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C580  

  
VCO Model



Z-Communications
Z-Communications

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C5800  

  
NPN SILICON RF TRANSISTOR

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package ORDE



Renesas
Renesas

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C5840  

  
Silicon NPN epitaxial planar type Power Transistors

Power Transistors 2SC5840 Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 15.0±0.5 ■ Features • High-speed switching (tstg: storage tim



Panasonic Semiconductor
Panasonic Semiconductor

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C5883  

  
SMALL-SIGNAL TRANSISTOR

. DESCRIPTION 2SC5883 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, It is designed for high frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. FEATURE ●Super-thin flat lead type package. t=0.45mm ●High gain



ISAHAYA
ISAHAYA

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C5819  

  
NPN Transistor - 2SC5819

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm · High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) · High-spe



Toshiba Semiconductor
Toshiba Semiconductor

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