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Datasheet C517 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | C517 | NPN Transistor |
 ETC |
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| 5 | C5171 | NPN Transistor - 2SC5171 2SC5171
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5171
Power Amplifier Applications Driver Stage Amplifier Applications
Unit: mm
• •
High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Col |
 Toshiba Semiconductor |
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| 4 | C5174 | Silicon NPN Epitaxial Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications Driver Stage Amplifier Applications
2SC5174
Unit: mm
• High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1932
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Col |
Toshiba Semiconductor |
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| 3 | C5176 | NPN Transistor - 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5176
High-Current Switching Applications DC-DC Converter Applications
2SC5176
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 μs (typ.)
Absolute Maximum Ratings ( |
 Toshiba |
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