C5020
Won-Top Electronics
50A AVALANCHE AUTOMOTIVE CELL DIODE®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C50
Case: Cell Dio
C5022
Hitachi Semiconductor
NPN Transistor - 2SC50222SC5022
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
• High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
www.DataSheet.co.kr
12 3
1. Base 2. Collector 3. Emitter
Datasheet pdf - http://www.DataSheet4U.net/
2SC5
C5023
Hitachi
NPN Transistor - 2SC5023
2SC5023
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 1000 MHz typ
• High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ
• Suitable fo
C5024
Won-Top Electronics
50A AVALANCHE AUTOMOTIVE CELL DIODE®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C50
Case: Cell Dio
C5024
Hitachi Semiconductor
Silicon NPN Epitaxial2SC5024
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics fT = 300 MHz typ
• High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
• Suitable for wide band video amp