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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dis
® WON-TOP ELECTRONICS Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX C5020, C5024, C5036 50A AVALANCHE AUTOMOTIVE CELL DIODE Pb D Anode + C E Mechanical Data B C50 Case: Cell Diode Passivated with Silicon Rubber Te
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 2SC5095 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base vo
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications 2SC5439 Unit: mm • Excellent switching times: tr = 0.2 μs (typ.), tf = 0.15 μs (typ.) • High collector
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 2SC5094 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage E
Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-volta
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PartNumber.co.kr | 2020 | 연락처 |