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(1/4) REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products o
C Series General Application Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] April 2011 Issue date: TDK MLCC US Catalog Version B11 Free Datasheet http://www.datasheet4
Ordering number:EN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2045B [2SC4522] 6.5
Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2045B [2SC4522] 6.5
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Power Switching Applications 2SC4541 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 μs (typ.) • Small flat package • PC = 1.0 t
(1/4) REMINDERS Please read this before using the product. SAFETY REMINDERS REMINDERS 1. If you intend to use a product listed in this catalog for a purpose that may cause loss of life or other damage, you must contact our company’s sales window. 2. We may modify products o
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