C4419 전자부품 데이터시트

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applications 2SC4409 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTORS C44C8, C44C11 TO - 220 Plastic Package Medium Power Switching and Amplifier Applications Complementary C45C Series ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector- Em

Ordering number:EN2756 NPN Epitaxial Planar Silicon Transistor 2SC4403 VHF/UHF Local Oscillator Applications Applications · VHF/UHF oscillators. Features · High cutoff frequency : fT=3.0GHz typ · High power gain : MAG=12dB typ (f=0.9GHz) · Small noise figure : NF=2.5dB typ (f=0.9GHz) · Very s

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTORS C44C8, C44C11 TO - 220 Plastic Package Medium Power Switching and Amplifier Applications Complementary C45C Series ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector- Em